600v - 13 ? - 0.8a general features 100% avalanche tested extremely high dv/dt capability gate charge minimized new high voltage benchmark description the L1N60A is a high voltage mosfet and is designed to have better characteristics,such as fast switching time,low gate charge,low on-state restance. applications switching application internal schematic diagram type v dss r ds(on) i d pw L1N60A 600v <15 ? 0.3a 3w to-92 L1N60A leshan radio company, ltd. 1/9 ) n-channel mosfet
electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20k ? )600v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25c 0.3 a i d drain current (continuous) at t c =100c 0.189 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 1.2 a p tot total dissipation at t c = 25c 3 w derating factor 0.25 w/c v esd(g-d) gate source esd(hbm-c=100pf, r=1.5k ?) 800 v dv/dt (2) 2. i sd 0. 3a, di/dt 200a/s, v dd =80%v (br)dss peak diode recovery voltage slope 4.5 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 2. thermal resistance symbol parameter value unit to-92 r thj-case thermal resistance junction-case max -- c/w r thj-a thermal resistance junction-ambient max 120 1. when mounted on 1 inch2 fr-4 board, 2 oz cu c/w r thj-lead thermal resistance junction-lead max 40 c/w t l maximum lead temperature for soldering purpose 260 c table 3. avalanche data symbol parameter value unit i ar avalanche curent, repetitive or noy-repetitive (pulse width limited by tj max) 0.8 a e as single pulse avalanche energy (starting tj=25c, id=iar, vdd=50v) 60 mj to-92 leshan radio company, ltd. L1N60A 2/9
electrical characteristics (t case =25c unless otherwise specified) table 4. on/off states symbol parameter test condictions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = maxrating @125c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50a 33.754..5v r ds(on) static drain-source on resistance v gs = 10v, i d = 0.4a 13 15 ? table 5. dynamic symbol parameter test condictions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds =15v, i d = 0.4a 0.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1 mhz, v gs =0 94 17.6 2.8 pf pf pf c oss eq (2) . 2. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds inceases from 0 to 80% v dss equivalent output capacitance v gs =0, v ds =0v to 480v 11 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =480v, i d = 0.8a v gs =10v (see figure 11) 4.9 1 2.7 6.9 nc nc nc leshan radio company, ltd. L1N60A 3/9
table 6. switching times symbol parameter test condictions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =300 v, i d = 0.4a, r g =4.7 ?, v gs =10v (see figure 19) 5.5 5 13 28 ns ns ns ns table 7. source drain diode symbol parameter test condictions min typ. max unit i sd source-drain current 0.8 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) 2.4 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd =0.8a, v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =0.8a, di/dt = 100a/s, v dd =20v, tj=25c 135 216 3.2 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =0.8a, di/dt = 100a/s, v dd =20v, tj=150c 140 224 3.2 ns nc a table 8. gate-source zener diode symbol parameter test condictions min. typ. max. unit bv gso (1) gate-source braekdown voltage igs=1ma (open drain) 30 v leshan radio company, ltd. L1N60A 4/9
electrical characteristics (curves) figure 1. safe operating area for to-92 figure 2. thermal impedance for to-92 figure 3. output characterisics figure 4. transfer characteristics leshan radio company, ltd. L1N60A 5/9
figure 5. transconductance figure 6. static drain-source on resistance figure 7. gate charge vs gate-source voltage figure 8. capacitance variations leshan radio company, ltd. L1N60A 6/9
figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics figure 12. normalized b vdss vs temperature figure 13. maximum avalanche energy vs temperature figure 14. max id current vs tc leshan radio company, ltd. L1N60A 7/9
test circuit figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform leshan radio company, ltd. L1N60A 8/9
dim. mm. inch min. typ max. min. typ. max. a 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 d 4.45 4.95 0.175 0.194 e 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 l 12.70 15.49 0.50 0.610 r 2.16 2.41 0.085 0.094 s1 0.92 1.52 0.036 0.060 w 0.41 0.56 0.016 0.022 v5 5 to-92 mechanical data leshan radio company, ltd. L1N60A 9/9
|
